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june 2015 docid027933 rev 1 1 / 16 this is information on a product in full production. www.st.com sth145n8f7 - 2ag automotive - grade n - channel 80 v, 3.3 m typ., 90 a stripfet? f7 power mosfet in a h2pak - 2 package datasheet - production data figure 1 : internal schematic diagram features order code v ds r ds(on) max. i d p tot sth145n8f7 - 2ag 80 v 4 m 90 a 200 w ? designed for automotive applications and aec - q101 qualified ? among the lowest r ds(on) on the market ? excellent figure of merit (fom) ? low c rss /c iss ratio for emi immunity ? high avalanche ruggedness applications ? switching applications description this n - channel power mosfet utilizes stripfet? f7 technology with an enhanced trench gate structure that results in very low on - state resi stance, while also reducing internal capacitance and gate charge for faster and more efficient switching. table 1: device summary order code marking package packaging sth145n8f7 - 2ag 145n8f7 h2pak - 2 tape and reel
contents sth145n8f7 - 2ag 2 / 16 doc id027933 rev 1 contents 1 electrical ratings ................................ ................................ ............. 3 2 electrical characteristics ................................ ................................ 4 2.1 electrical characteri stics (curves) ................................ ...................... 6 3 test circuits ................................ ................................ ..................... 8 4 package information ................................ ................................ ....... 9 4.1 h2pak - 2 package information ................................ ......................... 10 5 packing information ................................ ................................ ...... 13 6 revision history ................................ ................................ ............ 15
sth145n8f7 - 2ag electrical ratings docid027933 rev 1 3 / 16 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v ds drain - source voltage 80 v v gs gate - source voltage 20 v i d drain current (continuous) at t c = 25 c 90 (1) a i d drain current (continuous) at t c = 100 c 90 a i dm (2) drain current (pulsed) 360 a p tot total dissipation at t c = 25 c 200 w e as (3) single pulse avalanche energy 515 mj t j operating junction temperature - 55 to 175 c t stg storage temperature notes: (1) limited by package (2) pulse width is limited by safe operating area (3) starting tj =25 c, id = 18.5 a, vdd = 50 v table 3: thermal data symbol parameter value unit r thj - pcb (1) thermal resistance junction - pcb 35 c/w r thj - case thermal resistance junction - case 0.75 c/w notes: (1) when mounted on fr - 4 board of 1inch2 , 2oz cu
electrical characteristics sth145n8f7 - 2ag 4 / 16 docid027933 rev 1 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4: on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage v gs = 0, i d = 250 a 80 v i dss zero gate voltage drain current v gs = 0, v ds = 80 v 1 a v gs = 0, v ds = 80 v, t j =125 c 10 a i gss gate - source leakage current v ds = 0, v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2.5 4.5 v r ds(on) static drain - source on - resistance v gs =10 v, i d = 45 a 3.3 4 m table 5: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v gs = 0, v ds = 40 v, f = 1 mhz - 6340 - pf c oss output capacitance - 1195 - pf c rss reverse transfer capacitance - 105 - pf q g total gate charge v dd = 40 v, i d = 64 a, v gs = 10 v - 96 - nc q gs gate - source charge - 30 - nc q gd gate - drain charge - 26 - nc table 6: switching times symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = 40 v, i d = 45 a r g =4.7 , v gs = 10 v - 26 - ns t r rise time - 51 - ns t d(off) turn - off - delay time - 82 - ns t f fall time - 44 - ns
sth145n8f7 - 2ag electrical characteristics docid027933 rev 1 5 / 16 table 7: source drain diode symbol parameter test conditions min. typ. max. unit i sd source - drain current - 90 a i sdm (1) source - drain current (pulsed) - 360 a v sd (2) forward on voltage v gs = 0, i sd = 90 a - 1.2 v t rr reverse recovery time i sd = 64 a, di/dt = 100 a/ s, v dd = 60 v t j = 150 c - 58 ns q rr reverse recovery charge - 92 nc i rrm reverse recovery current - 3.2 a notes: (1) pulse width is limited by safe operating area (2) pulse test: pulse duration = 300 s, duty cycle 1.5%
electrical characteristics sth145n8f7 - 2ag 6 / 16 docid027933 rev 1 2.1 electrical characteristics (curves) figure 2 : safe operating area figure 3 : thermal impedance figure 4 : output characteristics figure 5 : transfer characteristics figure 6 : normalized v(br)dss vs. temperature figure 7 : static drain - source on resistance r ds(on) 3.290 20 i d (a) (m) v gs = 10v 30 40 50 60 70 80 90 3.295 3.300 3.305 3.310 3.315 gipd120920131215m t i d 50 0 0 2 v ds (v) 4 (a) 6 8 100 150 200 4v 6v 7v v gs = 10v 5v 250 300 gipd130920130919m t i d 50 0 0 2 v gs (v) 4 (a) v ds = 2v 6 8 100 150 200 1 3 5 7 300 9 250 v (br)dss 0.98 0.96 0.94 -75 t j (c) 25 0 75 125 -25 175 i d = 250a 1 1.02 1.04 k t p (s) single pulse 10 -1 = 0.5 0.2 0.1 0.05 0.02 0.01 10 -2 10 -2 10 -3 10 -4 10 -5 10 -6 10 -7 10 -1 i d 100 10 1 0.1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max rds(on) 100s 1ms 10ms tj=175c t c=25c sinlge pulse gipd130920130848m t
sth145n8f7 - 2ag electrical characteristics docid027933 rev 1 7 / 16 figure 8 : gate charge vs. gate - source voltage figure 9 : capacitance variations figure 10 : normalized gate threshold voltage vs. temperature figure 11 : normalized on resistance vs. temperature figure 12 : source - drain diode forward characteristics v sd 0.6 20 i d (a) 50 40 60 t j = -55c 30 70 80 90 0.7 0.8 0.9 1 1.1 t j = 25c t j = 175c v gs(th) 1 0.8 0.6 0.4 -75 t j (c) 25 1.2 0 75 125 -25 175 i d = 250a r ds(on) 0.8 0.6 0.4 -75 t j (c) 25 1.8 0 75 125 -25 175 v gs = 10v 1 1.2 1.4 1.6 v gs 6 4 2 0 0 40 q g (nc) 80 (v) 8 10 12 20 60 100 c 3000 2000 1000 0 0 20 v ds (v) 40 (pf) c iss 4000 10 30 50 c oss c rss 60 70 5000 6000 7000 8000
test circ uits sth145n8f7 - 2ag 8 / 16 docid027933 rev 1 3 test circuit s figure 13 : switching times test circuit for resistive load figure 14 : gate charge test circuit figure 15 : test circuit for inductive load switching and diode recovery times figure 16 : unclamped inductive load test circuit figure 17 : unclamped inductive waveform figure 18 : switching time waveform
sth145n8f7 - 2ag package information docid027933 rev 1 9 / 16 4 package information in order to meet environmental requirements, st of fers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package information sth145n8f7 - 2ag 10 / 16 docid027933 rev 1 4.1 h2pak - 2 package inf ormation figure 19 : h2pak - 2 package outline 8159712_d
sth145n8f7 - 2ag package information docid027933 rev 1 11 / 16 table 8: h2pak - 2 mechanical data dim. mm min. typ. max. a 4.30 - 4.80 a1 0.03 0.20 c 1.17 1.37 e 4.98 5.18 e 0.50 0.90 f 0.78 0.85 h 10.00 10.40 h1 7.40 7.80 l 15.30 15.80 l1 1.27 1.40 l2 4.93 5.23 l3 6.85 7.25 l4 1.5 1.7 m 2.6 2.9 r 0.20 0.60 v 0 8
package information sth145n8f7 - 2ag 12 / 16 docid027933 rev 1 figure 20 : h2pak - 2 recommended footprint 8159712_d
sth145n8f7 - 2ag packing information docid027933 rev 1 13 / 16 5 packing information figure 21 : tape outline
packing information sth145n8f7 - 2ag 14 / 16 docid027933 rev 1 figure 22 : reel outline table 9: tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base quantity 1000 p2 1.9 2.1 bulk quantity 1000 r 50 t 0.25 0.35 w 23.7 24.3 a d b f u ll r ad i u s t ape s l o t i n c o r e f o r t ape s t a rt g m ea s u r e d a t hu b c n ree l d i m ens io n s 40 mm m i n . acc e ss ho l e at s lot lo c a t ion t
sth145n8f7 - 2ag revision history docid027933 rev 1 15 / 16 6 revision history table 10: document revision history date revision changes 05 - jun - 2015 1 first release.
sth145n8f7 - 2ag 16 / 16 docid02 7933 rev 1 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and s t assumes no liability for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information se t forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2015 stmicroelectronics C all rights reserved

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